BAP55LX,315

NXP USA Inc

BAP55LX,315

Datasheet

Analog & Power

RF DIODE PIN 50V 135MW 2DFN

Active2-XDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberBAP55
Capacitance @ Vr, F0.28pF @ 20V, 1MHz
Diode TypePIN - Single
ManufacturerNXP USA Inc.
Product StatusActive
Resistance @ If, F800mOhm @ 100mA, 100MHz

Electrical

Voltage - Peak Reverse (Max)50V
Current - Max100 mA
Max Power Dissipation135 mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case2-XDFN
Supplier Device PackageDFN1006D-2

Environmental

Operating Temperature-65°C ~ 150°C (TJ)