General
| Base Product Number | 2N39 |
|---|---|
| Manufacturer | NXP USA Inc. |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
|---|---|
| Current - Collector (Ic) (Max) | 200 mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Power - Max | 500 mW |
| Frequency - Transition | 250MHz |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|