General
| Manufacturer | NXP Semiconductors |
|---|---|
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 100mA, 1A |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 2V |
| Power - Max | 325 mW |
| Frequency - Transition | 170MHz |
Mechanical
| Package | Bulk |
|---|---|
| Package / Case | 3-XDFN Exposed Pad |
| Supplier Device Package | DFN1010D-3 |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|