BUK769R6-80E,118

NXP Semiconductors

BUK769R6-80E,118

Analog & Power

NEXPERIA BUK769R6-80E - 75A, 80V

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.6mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs59.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4682 pF @ 25 V
ManufacturerNXP Semiconductors
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Max Power Dissipation182W (Tc)

Mechanical

PackageBulk

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101