BUK6E3R2-55C,127

NXP Semiconductors

BUK6E3R2-55C,127

Analog & Power

NEXPERIA BUK6E3R2-55C - 120A, 55

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.2mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds15300 pF @ 25 V
ManufacturerNXP Semiconductors
Mounting TypeThrough Hole
Product StatusActive
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.8V @ 1mA

Electrical

Drain-to-Source Voltage55 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Max Power Dissipation306W (Tc)

Mechanical

PackageBulk

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101