Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 90A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 253 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 25 V |
| Manufacturer | NXP Semiconductors |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Drain-to-Source Voltage | 55 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 228A (Tc) |
| Max Power Dissipation | 300W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Supplier Device Package | D2PAK-7 |
| Operating Temperature | -55°C~175°C(TJ) |
|---|