BUK6610-75C,118

NXP Semiconductors

BUK6610-75C,118

Analog & Power

NEXPERIA BUK6610 - N-CHANNEL TRE

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5251 pF @ 25 V
ManufacturerNXP Semiconductors
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.8V @ 1mA

Electrical

Drain-to-Source Voltage75 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C78A (Tc)
Max Power Dissipation158W (Tc)

Mechanical

PackageBulk

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101