General
| Output Configuration | Phototransistor |
|---|---|
| Manufacturer | NTE Electronics, Inc |
| Mounting Type | Through Hole |
| Product Status | Active |
| Response Time | 8µs, 50µs |
| Sensing Distance | 0.118" (3mm) |
| Sensing Method | Through-Beam |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 0.4 V |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA |
| Current - DC Forward (If) (Max) | 60 mA |
Mechanical
| Package | Bulk |
|---|---|
| Package / Case | PCB Mount |
Environmental
| Operating Temperature | -55°C~100°C |
|---|