NTE2987

NTE Electronics, Inc

NTE2987

Datasheet

Analog & Power

MOSFET N-CH 100V 20A TO220

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs120mOhm @ 10A, 5V
FET FeatureLogic Level Gate, 4V Drive
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 25 V
ManufacturerNTE Electronics, Inc
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C20A
Max Power Dissipation105W (Tc)

Mechanical

PackageBag
Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature175°C(TJ)