NTE2389

NTE Electronics, Inc

NTE2389

Datasheet

Analog & Power

MOSFET N-CHANNEL 60V 35A TO220

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 20A, 10V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 25 V
ManufacturerNTE Electronics, Inc
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C35A (Ta)
Max Power Dissipation125W (Ta)

Mechanical

PackageBag
Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature175°C(TJ)