Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 13.4A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 116.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 15 V |
| Manufacturer | Nexperia USA Inc. |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 71.1A (Tc) |
| Max Power Dissipation | 1.8W (Ta), 50W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | MLPAK33 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|