PSMN8R9-100BSEJ

Nexperia USA Inc

PSMN8R9-100BSEJ

Datasheet

Analog & Power

MOSFET N-CH 100V 108A D2PAK

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs128 nC @ 10 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage100 V
Current - Continuous Drain (Id) @ 25°C75A (Tj)
Max Power Dissipation296W

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

Environmental

Operating Temperature175°C(TJ)