PSMN3R9-100YSFX

Nexperia USA Inc

PSMN3R9-100YSFX

Datasheet

Analog & Power

MOSFET N-CH 100V 120A LFPAK56

ActiveSOT-1023, 4-LFPAKAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.3mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7360 pF @ 50 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C120A (Ta)
Max Power Dissipation245W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-1023, 4-LFPAK
Supplier Device PackageLFPAK56

Environmental

Operating Temperature-55°C~150°C(TJ)