PSMN3R2-30YLC,115

Nexperia USA Inc

PSMN3R2-30YLC,115

Datasheet

Analog & Power

MOSFET N-CH 30V 100A LFPAK56

ObsoleteSC-100, SOT-669Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.5mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2081 pF @ 15 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1.95V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Max Power Dissipation92W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSC-100, SOT-669
Supplier Device PackageLFPAK56, Power-SO8

Environmental

Operating Temperature-55°C ~ 175°C (TJ)