PSMN1R8-80SSFJ

Nexperia USA Inc

PSMN1R8-80SSFJ

Datasheet

Analog & Power

NEXTPOWER 80/100V MOSFETS

ActiveSOT-1235Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.8mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds15319 pF @ 40 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C270A (Ta)
Max Power Dissipation341W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-1235
Supplier Device PackageLFPAK88 (SOT1235)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)