Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 25A, 10V |
|---|---|
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7966 pF @ 20 V |
| Manufacturer | Nexperia USA Inc. |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.05V @ 1mA |
| Drain-to-Source Voltage | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
| Max Power Dissipation | 194W (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | SC-100, SOT-669 |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Operating Temperature | -55°C~175°C(TJ) |
|---|