PSMN1R0-40YSHX

Nexperia USA Inc

PSMN1R0-40YSHX

Datasheet

Analog & Power

MOSFET N-CH 40V 290A LFPAK56

ActiveSOT-1023, 4-LFPAKAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1mOhm @ 25A, 10V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9433 pF @ 20 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.6V @ 1mA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C290A (Ta)
Max Power Dissipation333W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-1023, 4-LFPAK
Supplier Device PackageLFPAK56

Environmental

Operating Temperature-55°C ~ 175°C (TJ)