PSMN0R9-30YLDX

Nexperia USA Inc

PSMN0R9-30YLDX

Datasheet

Analog & Power

MOSFET N-CH 30V 300A LFPAK56

ActiveSOT-1023, 4-LFPAKAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.87mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7668 pF @ 15 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Max Power Dissipation291W

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-1023, 4-LFPAK
Supplier Device PackageLFPAK56

Environmental

Operating Temperature-55°C~150°C(TJ)