PSMN021-100YLX

Nexperia USA Inc

PSMN021-100YLX

Datasheet

Analog & Power

MOSFET N-CH 100V 49A LFPAK56

ActiveSC-100, SOT-669Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs21.5mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs65.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4640 pF @ 25 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.1V @ 1mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C49A (Tc)
Max Power Dissipation147W (Tc)

Mechanical

Package / CaseSC-100, SOT-669
Supplier Device PackageLFPAK56, Power-SO8

Environmental

Operating Temperature-55°C ~ 175°C (TJ)