PSMN013-100YSEX

Nexperia USA Inc

PSMN013-100YSEX

Datasheet

Analog & Power

MOSFET N-CH 100V 82A LFPAK56

ActiveSC-100, SOT-669Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3775 pF @ 50 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C82A (Tj)
Max Power Dissipation238W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-100, SOT-669
Supplier Device PackageLFPAK56, Power-SO8

Environmental

Operating Temperature-55°C~175°C(TJ)