PMZB600UNEYL

Nexperia USA Inc

PMZB600UNEYL

Datasheet

Analog & Power

MOSFET N-CH 20V 600MA DFN1006B-3

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs620mOhm @ 600mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds21.3 pF @ 10 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id950mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Max Power Dissipation360mW (Ta), 2.7W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case3-XFDFN
Supplier Device PackageDFN1006B-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)