PMXB65ENEZ

Nexperia USA Inc

PMXB65ENEZ

Datasheet

Analog & Power

MOSFET N-CH 30V 3.2A DFN1010D-3

Active3-XDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs67mOhm @ 3.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds295 pF @ 15 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Max Power Dissipation400mW (Ta), 8.33W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case3-XDFN Exposed Pad
Supplier Device PackageDFN1010D-3

Environmental

Operating Temperature-55°C~150°C(TJ)