PMX800ENEZ

Nexperia USA Inc

PMX800ENEZ

Datasheet

Analog & Power

PMX800ENEZ

Active0201 (0603 Metric)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.1Ohm @ 400mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds32 pF @ 30 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Max Power Dissipation300mW (Ta), 4.7W (Tc)

Mechanical

PackageBulk
Package / Case0201 (0603 Metric)
Supplier Device PackageDFN0603-3 (SOT8013)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)