PMV65ENEAR

Nexperia USA Inc

PMV65ENEAR

Datasheet

Analog & Power

MOSFET N-CH 40V 2.7A TO236AB

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 2.7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 20 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)
Max Power Dissipation490mW (Ta), 6.25W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB

Environmental

Operating Temperature-55°C~150°C(TJ)