PMV35EPER

Nexperia USA Inc

PMV35EPER

Datasheet

Analog & Power

MOSFET P-CH 30V 5.3A TO236AB

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 4.2A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds793 pF @ 15 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Max Power Dissipation480mW (Ta), 1.2W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)