PMV120ENEAR

Nexperia USA Inc

PMV120ENEAR

Datasheet

Analog & Power

MOSFET N-CH 60V 2.1A TO236AB

DiscontinuedTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs123mOhm @ 2.1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds275 pF @ 30 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.7V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.1A (Ta)
Max Power Dissipation513mW (Ta), 6.4W (Tc)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101