PMT21EN,115

Nexperia USA Inc

PMT21EN,115

Datasheet

Analog & Power

MOSFET N-CH 30V 7.4A SOT223

ObsoleteTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs21mOhm @ 7.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds588 pF @ 15 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7.4A (Ta)
Max Power Dissipation820mW (Ta), 8.33W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223

Environmental

Operating Temperature-55°C ~ 150°C (TJ)