PMPB95ENEA/FX

Nexperia USA Inc

PMPB95ENEA/FX

Datasheet

Analog & Power

MOSFET N-CH 80V 4.1A 6DFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs105mOhm @ 2.8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds504 pF @ 40 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.7V @ 250µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.1A (Ta)
Max Power Dissipation1.6W (Ta)

Mechanical

PackageTape & Reel (TR)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101