PMPB8XNX

Nexperia USA Inc

PMPB8XNX

Datasheet

Analog & Power

MOSFET N-CH 20V 10.1A 6DFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 10.1A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1696 pF @ 10 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id900mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C10.1A (Ta)
Max Power Dissipation1.9W (Ta), 12.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageDFN2020MD-6

Environmental

Operating Temperature-55°C~150°C(TJ)