PMPB55XNEAX

Nexperia USA Inc

PMPB55XNEAX

Datasheet

Analog & Power

MOSFET N-CH 30V 3.8A 6DFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs72mOhm @ 3.8A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds255 pF @ 15 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.25V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Max Power Dissipation550mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101