PMPB50ENEX

Nexperia USA Inc

PMPB50ENEX

Datasheet

Analog & Power

MOSFET DFN2020MD-6

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs43mOhm @ 5.1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds271 pF @ 15 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.9A (Ta)
Max Power Dissipation1.9W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageDFN2020MD-6

Environmental

Operating Temperature-55°C ~ 175°C (TJ)