PMPB17EPX

Nexperia USA Inc

PMPB17EPX

Datasheet

Analog & Power

P-CHANNEL TRENCH MOSFET

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs21mOhm @ 5.8A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1570 pF @ 15 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7.7A (Ta)
Max Power Dissipation1.9W (Ta), 13W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageDFN2020M-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)