PMPB08R4VPX

Nexperia USA Inc

PMPB08R4VPX

Datasheet

Analog & Power

MOSFET P-CH 12V 12A DFN2020M-6

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.6mOhm @ 12A, 4.5V
Base Product NumberPMPB08
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 6 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id900mV @ 250µA

Electrical

Drain-to-Source Voltage12 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Max Power Dissipation1.9W (Ta), 12.5W (Tc)

Mechanical

Package / Case6-UDFN Exposed Pad
Supplier Device PackageDFN2020MD-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)