PMH600UNEH

Nexperia USA Inc

PMH600UNEH

Datasheet

Analog & Power

MOSFET N-CH 20V 800MA DFN0606-3

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs620mOhm @ 600mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds21.3 pF @ 10 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id0.95V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)
Max Power Dissipation370mW (Ta), 2.2W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case3-XFDFN
Supplier Device PackageDFN0606-3

Environmental

Operating Temperature-55°C~150°C(TJ)