PMH550UNEH

Nexperia USA Inc

PMH550UNEH

Datasheet

Analog & Power

MOSFET N-CH 30V 770MA DFN0606-3

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs670mOhm @ 770mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds30.3 pF @ 15 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id950mV @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C770mA (Ta)
Max Power Dissipation380mW (Ta), 2.8W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case3-XFDFN
Supplier Device PackageDFN0606-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)