PMDXB950UPEZ

Nexperia USA Inc

PMDXB950UPEZ

Datasheet

Analog & Power

MOSFET 2P-CH 20V 0.5A 6DFN

Active6-XFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.4Ohm @ 500mA, 4.5V
Base Product NumberPMDXB950
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds43pF @ 10V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950mV @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C500mA
Power - Max265mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-XFDFN Exposed Pad
Supplier Device PackageDFN1010B-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)