PMDXB600UNEZ

Nexperia USA Inc

PMDXB600UNEZ

Datasheet

Analog & Power

MOSFET 2N-CH 20V 0.6A 6DFN

Active6-XFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs620mOhm @ 600mA, 4.5V
Base Product NumberPMDXB600
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds21.3pF @ 10V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950mV @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C600mA
Power - Max265mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT) Cut Tape (CT)
Package / Case6-XFDFN Exposed Pad
Supplier Device PackageDFN1010B-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)