PMDT290UNEH

Nexperia USA Inc

PMDT290UNEH

Datasheet

Analog & Power

MOSFET 2N-CH 20V 0.8A SOT666

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs380mOhm @ 500mA, 4.5V
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds83pF @ 10V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950mV @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)
Power - Max330mW (Ta), 1.09W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-666

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101