PMDPB80XP,115

Nexperia USA Inc

PMDPB80XP,115

Datasheet

Analog & Power

MOSFET 2P-CH 20V 2.7A 6HUSON

Active6-UFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs102mOhm @ 2.7A, 4.5V
Base Product NumberPMDPB80
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 10V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C2.7A
Power - Max485mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-UFDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)