PMDPB56XNEAX

Nexperia USA Inc

PMDPB56XNEAX

Datasheet

Analog & Power

MOSFET 2N-CH 30V 3.1A 6DFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs72mOhm @ 3.1A, 4.5V
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds256pF @ 15V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.25V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Power - Max485mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageDFN2020D-6

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q100