PMCXB1000UEZ

Nexperia USA Inc

PMCXB1000UEZ

Datasheet

Analog & Power

MOSFET N/P-CH 30V 0.59A 6DFN

Active6-XFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
Base Product NumberPMCXB1000
ConfigurationN and P-Channel Complementary
Gate Charge (Qg) (Max) @ Vgs1.05nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds30.3pF @ 15V, 43.2pF @ 15V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950mV @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C590mA (Ta), 410mA (Ta)
Power - Max285mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-XFDFN Exposed Pad
Supplier Device PackageDFN1010B-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)