PMCB60XNEAYL

Nexperia USA Inc

PMCB60XNEAYL

Datasheet

Analog & Power

SMALL SIGNAL MOSFET FOR MOBILE

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs55mOhm @ 3.5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds420 pF @ 15 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.1V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Max Power Dissipation480mW (Ta), 7W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case3-XFDFN
Supplier Device PackageDSN1006-3

Environmental

Operating Temperature-55°C~150°C(TJ)