Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 3.3 V |
| Input Capacitance (Ciss) (Max) @ Vds | 855 pF @ 6 V |
| Manufacturer | Nexperia USA Inc. |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Drain-to-Source Voltage | 12 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Max Power Dissipation | 1.2W (Ta), 31W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 3-XDFN |
| Supplier Device Package | DSN1010-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|