PHKD3NQ10T,518

Nexperia USA Inc

PHKD3NQ10T,518

Datasheet

Analog & Power

MOSFET 2N-CH 100V 3A 8SO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs90mOhm @ 1.5A, 10V
Base Product NumberPHKD3
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds633pF @ 20V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C3A
Power - Max2W

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-65°C ~ 150°C (TJ)