Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 50mOhm @ 14A, 11V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 25 V |
| Manufacturer | Nexperia USA Inc. |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 2mA |
| Drain-to-Source Voltage | 75 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 11V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Max Power Dissipation | 88W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| Operating Temperature | -55°C~175°C(TJ) |
|---|