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Home/Products/Discrete Semiconductor Products/Transistors - Bipolar (BJT) - Single, Pre-Biased/PDTD113ZTVL
PDTD113ZTVL

Nexperia USA Inc

PDTD113ZTVL

Datasheet

Analog & Power

TRANS PREBIAS NPN TO236AB

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberPDTD113
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)10 kOhms
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA

Electrical

Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V

Mechanical

Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB

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