Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 200mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23.6 pF @ 10 V |
| Manufacturer | Nexperia USA Inc. |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Max Power Dissipation | 350mW (Ta), 3.1W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 3-XFDFN |
| Supplier Device Package | DFN1006B-3 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|