NX2301P,215

Nexperia USA Inc

NX2301P,215

Datasheet

Analog & Power

MOSFET P-CH 20V 2A TO236AB

DiscontinuedTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs120mOhm @ 1A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 6 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusNot For New Designs
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Max Power Dissipation400mW (Ta), 2.8W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature150°C (TJ)
QualificationAEC-Q101