Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 100mA, 10V |
|---|---|
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 25V |
| Manufacturer | Nexperia USA Inc. |
| Mounting Type | Surface Mount |
| Product Status | Not For New Designs |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Drain-to-Source Voltage | 60V, 50V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 330mA, 170mA |
| Power - Max | 500mW |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-666 |
| Grade | Automotive |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Qualification | AEC-Q101 |