BUK9Y14-80E,115

Nexperia USA Inc

BUK9Y14-80E,115

Datasheet

Analog & Power

MOSFET N-CH 80V 62A LFPAK56

ActiveSC-100, SOT-669Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4640 pF @ 25 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2.1V @ 1mA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C62A (Tc)
Max Power Dissipation147W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101